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HIVE INF
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ARCHIVE INFORMATION
6
RF Device Data
Freescale Semiconductor
MRF9002NR2
TYPICAL CHARACTERISTICS
Crss
Ciss
30
2
12
22
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 10. Capacitance versus Drain Source Voltage
Coss
23 24 25 26 27 28 29
3
4
5
6
7
8
9
10
11
C, CAPACITANCE (pF)
100 120 140 160 180 200
210
109
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTTF in a particular application.
108
106
MTTF FACTOR (HOURS X AMPS
2
)
90 110 130 150 170 190
Figure 11. MTTF Factor versus Junction Temperature
107
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